voltage range 35 to 200 volts current 10.0 amperes plastic material used carri es underwrit ers laboratory classifications 94v-0 metal silicon junction, ma jority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, hi gh frequency inverters, free wheeling, and polarity pr otection applications guardring for over voltage protection high temperature so ldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case cases: jedec to-220a molded plastic body polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams maximum ratings and elect rical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbr 1035 mbr 1045 mbr 1050 mbr 1060 mbr 1090 mbr 10100 mbr 10200 units maximum recurrent peak reverse voltage v rrm 35 45 50 60 90 100 200 v maximum rms voltage v rms 24 31 35 42 63 70 140 v maximum dc blocking voltage v dc 35 45 50 60 90 100 200 v maximum average forward rectified current see fig. 1 i (av) 10 a peak repetitive forwar d current (square wave, 20khz) at tc=135 o c i frm 20.0 a peak forward surge curr ent, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a voltage rate of change (rated v r ) dv/dt 10,000 v/us maximum instantaneous forward voltage at (note 2) i f =10a, tc=25 o c i f =10a, tc=125 o c i f =20a, tc=25 o c i f =20a, tc=125 o c v f 0.70 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.71 - - 1.05 - - v maximum instantaneous reverse current @ tc =25 at rated dc blockin g volta g e (note 2) @ tc=125 i r 0.1 15.0 0.1 6.0 0.009 10 ma ma typical junction capacitance (note 3) cj 350 280 200 pf m aximum t hermal r esistance , j unction to case r jc 3.5 2.0 /w operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +175 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. mounted on heatsink size of 2 in x 3 in x 0.25in al-plate. mbr1035-mbr10200 10.0amps.schottky barrier rectifiers features m echani cal d ata dimensions in inches and (millimeters) to-220ac .412(10.5) max .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) dia pin1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) pin 1 pin 2 case www.kersemi.com
mbr1035-mbr10200 10.0amps.schottky barrier rectifiers fig.2- maximum non-repetitive for w ard surge current peak for w ard surge current . (a) 1 0.1 10 100 25 50 75 125 100 150 175 number of cycles a t 60hz fig.3- typical inst ant aneous for w ard characteristics inst ant aneous for w ard current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 for w ard vol t age. (v) pulse width=300 s 1% duty cycle tj=25 c 0 tj=125 c 0 mbr1035-mbr1045 mbr1050-mbr1060 mbr1090-MBR10100 mbr10200 fig.4- typical reverse characteristics inst ant aneous reverse current .( m a ) 0 20 40 60 80 100 120 140 percent of ra ted peak reverse vol t age. (%) 0.001 0.1 0.01 1 10 50 mbr1035-mbr1060 mbr1090-mbr1020 tj=125 c 0 tj=25 c 0 tj=75 c 0 t , pulse dura tion.( sec.) fig.5- typical junction cap acit ance junction cap acit ance.(pf) 0.1 1.0 10 100 100 1,000 4,000 reverse vol t age. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 mbr1035-mbr1045 mbr1050 & mbr1060 mbr1090-mbr10200 0 50 0 2 4 6 8 case tempera ture. ( c) o transient thermal impedance.( c/w) o fig.6- typical transient thermal characteristic 1 0.01 0.1 10 100 0.1 10.0 1 100 ra tings and characteristic cur ves (mbr1035 thru mbr10200) 100 150 10 12 a verage for w ard current . (a) fig.1- for w ard current dera ting cur ve resistive or inductive load mbr1035-mbr1045 mbr1050-mbr10200 www.kersemi.com
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